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IRF1010EZSPBF Real Image IRF1010EZSPBF real image10302
Same model may have multiple batches, images only for reference.
IRF1010EZSPBF Real Image IRF1010EZSPBF real image10302
IRF1010EZSPBF Real Image IRF1010EZSPBF real image10302
Same model may have multiple batches, images only for reference.

IRF1010EZSPBF

Part No IRF1010EZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
IRF1010EZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046391-IRF1010EZSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010EZSPBF CAD Model

Description

Infineon Technologies MOSFET, N-Channel, with a maximum power dissipation of 140W (Tc) and a drain-source breakdown voltage of 60V.

  • Channel Type: N-Channel
  • Power Dissipation (Max): 140W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Gate Charge (Max): 86nC @ 10V
  • Input Capacitance (Max): 2810pF @ 25V
  • Rds On (Max) @ Id,Vgs: 8.5 mOhm @ 51A, 10V
  • Package: D2PAK
  • Mounting: SMD (SMT)
  • Application: Discrete Semiconductor Products

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