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IRFL014NTRPBF

Part No IRFL014NTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 55V 2.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 1.9A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 190pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017614-IRFL014NTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFL014N
Introduction Date January 19, 2000
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFL014NTRPBF CAD Model

Description

The IRFL014NTRPBF is an N-channel MOSFET manufactured by Infineon Technologies.

  • Maximum Drain-Source Voltage: 55V
  • Continuous Drain Current: 1.9A
  • Package: SOT-223

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3052 $50.3580
400+ $0.2504 $100.1600
620+ $0.2426 $150.4120
855+ $0.2348 $200.7540
1,105+ $0.2270 $250.8350
1,475+ $0.2035 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 79,508 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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