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Same model may have multiple batches, images only for reference.
IRFL024NTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFL024NTRPBF

Part No IRFL024NTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2.8A SOT223
Datasheet
IRFL024NTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18.3nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 75 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 017615-IRFL024NTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFL024NTRPBF CAD Model

Description

The Infineon Technologies IRFL024NTRPBF is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current @ 25°C: 2.8A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 400pF @ 25V
  • Maximum Rds On: 75 mOhm @ 2.8A, 10V
  • Package: SOT-223
  • Power Dissipation: 1W @ Ta
  • Temperature Range: -55°C to 150°C (TJ)

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71+ $4.2687 $303.0777
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