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Same model may have multiple batches, images only for reference.
IRFP250NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFP250NPBF

Part No IRFP250NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 30A TO-247AC
Datasheet
IRFP250NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 123nC @ 10V
Max Input Capacitance 2159pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 069506-IRFP250NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFP250N
Introduction Date February 11, 2004
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Not Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFP250NPBF CAD Model

Description

The Infineon Technologies IRFP250NPBF is a N-channel MOSFET used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 30A at Tc
  • Maximum Rds On at Id,Vgs: 75 mOhm at 18A and 10V
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Gate Charge: 123nC at 10V
  • Maximum Input Capacitance: 2159pF at 25V
  • Package: TO-247AC
  • Mounting: Through hole
  • Power Dissipation: 214W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Popularity: High
  • Supply and Demand Status: Sufficient

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