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Same model may have multiple batches, images only for reference.
IRFP3415 Real Image
Same model may have multiple batches, images only for reference.

IRFP3415

Part No IRFP3415
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 43A TO-247AC
Datasheet
IRFP3415 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 040725-IRFP3415
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP3415 CAD Model

Description

The Infineon Technologies IRFP3415 is a MOSFET transistor that features an N-channel polarity.

  • Polarity: N-channel
  • Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current at 25°C: 43A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V
  • Package: TO-247AC
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Rds On at Id,Vgs: 42 mOhm @ 22A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1936 $60.6784
45+ $2.6207 $117.9315
69+ $2.5387 $175.1703
95+ $2.4567 $233.3865
122+ $2.3747 $289.7134
163+ $2.1298 $347.1574
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Availability: 8,000 pieces
MOQ: 19 pcs
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