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FDB3672_F085

Part No FDB3672_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.2A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037972-FDB3672_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB3672_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 100V and a maximum continuous drain current at 25°C of 7.2A (Ta) and 44A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current @ 25°C: 7.2A (Ta), 44A (Tc)
  • Maximum Rds On at Id,Vgs: 28 mOhm @ 44A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 31nC @ 10V
  • Power Dissipation (Max): 120W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK (TO-263AB)
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9217 $59.2170
24+ $4.8591 $116.6184
37+ $4.7078 $174.1886
51+ $4.5553 $232.3203
66+ $4.4040 $290.6640
88+ $3.9478 $347.4064
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,600 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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