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IRFP4868PBF

Part No IRFP4868PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 300V 70A TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 10774pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 517W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 087508-IRFP4868PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFP4868
Introduction Date October 30, 2012
ECCN EAR99
Country of Origin China, Germany, Mexico, Republic of Korea, Taiwan, United Kingdom
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IRFP4868PBF CAD Model

Description

The Infineon Technologies IRFP4868PBF MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 300V and a maximum continuous drain current of 70A @ 25°C.

  • Drain-Source Breakdown Voltage: 300V
  • Maximum Continuous Drain Current: 70A @ 25°C
  • Package: TO-247AC package
  • Gate Charge: 270nC @ 10V
  • Compliance: Halogen-free and RoHS directive
  • Popularity: high popularity rating

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Pricing & Ordering

Quantity Unit Price Ext. Price
31+ $1.6610 $51.4910
65+ $1.5559 $101.1335
100+ $1.5033 $150.3300
144+ $1.3982 $201.3408
186+ $1.3456 $250.2816
233+ $1.2931 $301.2923
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,790 pieces
MOQ: 31 pcs
Order Increment : 1 pcs
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