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Same model may have multiple batches, images only for reference.
IRFP9140NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFP9140NPBF

Part No IRFP9140NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 23A TO-247AC
Datasheet
IRFP9140NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 97nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 117 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 017641-IRFP9140NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP9140NPBF CAD Model

Description

The Infineon Technologies 017641-IRFP9140NPBF is a P-Channel MOSFET with a maximum power dissipation of 140W (Tc).

  • Drive Voltage: 10V
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 23A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 97nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 117 mOhm @ 13A, 10V
  • Popularity: high popularity
  • Supply and Demand Status: balanced

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