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IRFR1018ETRRPBF

Part No IRFR1018ETRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 79A DPAK / Trans MOSFET N-CH Si 60V 79A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 69nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2290pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 110W (Tc)
Rds On (Maximum) @ Id, Vgs 8.4 mOhm @ 47A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D-Pak
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 777063-IRFR1018ETRRPBF
Popularity Medium
Supply and Demand Status Balance
Family Name IRFR1018E
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFR1018ETRRPBF CAD Model

Description

The Infineon Technologies IRFR1018ETRRPBF is a MOSFET transistor.

  • Maximum Drain-Source Voltage: 60V
  • Maximum Continuous Drain Current: 56A (Tc)
  • Series: HEXFET
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Gate Charge: 69nC @ 10V
  • Input Capacitance (Ciss): 2290pF @ 50V
  • Rds On: 8.4 mOhm @ 47A @ 10V
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 110W (Tc)
  • Status: Obsolete
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7636 $53.4520
160+ $0.6266 $100.2560
250+ $0.6070 $151.7500
345+ $0.5874 $202.6530
445+ $0.5679 $252.7155
590+ $0.5091 $300.3690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,670 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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