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Same model may have multiple batches, images only for reference.
IRFR3410TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3410TRRPBF

Part No IRFR3410TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 31A DPAK
Datasheet
IRFR3410TRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047041-IRFR3410TRRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR3410TRRPBF CAD Model

Description

The IRFR3410TRRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 31A @ 25°C manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 31A
  • Maximum Power Dissipation: 3W (Ta) and 110W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Package: D-Pak
  • Maximum Rds On @ Id,Vgs: 39 mOhm @ 18A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4120 $51.5000
260+ $0.3859 $100.3340
405+ $0.3729 $151.0245
580+ $0.3468 $201.1440
750+ $0.3338 $250.3500
940+ $0.3208 $301.5520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,150 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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