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IRFR3518PBF

Part No IRFR3518PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 38A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069549-IRFR3518PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR3518PBF CAD Model

Description

The Infineon Technologies IRFR3518PBF is a N-Channel MOSFET transistor that is designed for use in Discrete Semiconductor Products.

  • Drain-source breakdown voltage: 80V
  • Continuous drain current: 38A (Tc) @ 25°C
  • Power dissipation: 110W (Tc)
  • Drive voltage: 10V (Max Rds On, Min Rds On)
  • Technology: SMD (SMT)
  • Packaging: Tube/Rail
  • Temperature range: -55°C to 175°C (TJ)
  • Case/package: D-Pak, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-source threshold voltage: 4V @ 250μA
  • Maximum gate charge: 56nC @ 10V
  • Maximum input capacitance: 1710pF @ 25V
  • Maximum gate-source voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.8926 $57.8520
49+ $2.3734 $116.2966
76+ $2.2991 $174.7316
104+ $2.2250 $231.4000
135+ $2.1508 $290.3580
180+ $1.9284 $347.1120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,005 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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