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IRFR3303CPBF

Part No IRFR3303CPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 33A DPAK
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Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 31 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047037-IRFR3303CPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFR3303CPBF CAD Model

Description

The Infineon Technologies 1047037-IRFR3303CPBF is a N-Channel MOSFET with a maximum power dissipation of 57W (Tc) and a drain-source breakdown voltage of 30V.

  • Continuous Drain Current @ 25°C: 33A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 750pF @ 25V
  • Maximum Rds On: 31 mOhm @ 18A, 10V
  • Case/Package: D-Pak case/package with dimensions of TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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