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Same model may have multiple batches, images only for reference.
IRFR3704TRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3704TRRPBF

Part No IRFR3704TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1996pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069552-IRFR3704TRRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRFR3704TRRPBF CAD Model

Description

The Infineon Technologies IRFR3704TRRPBF is an N-channel MOSFET from Infineon Technologies.

  • Drain-source breakdown voltage: 20V
  • Continuous drain current: 75A @ 25°C
  • Maximum Rds On: 9.5 mOhm @ Id,Vgs of 15A, 10V
  • Gate-source threshold voltage: 3V @ 250μA
  • Maximum gate charge: 19nC @ 4.5V
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and demand status: limited
  • Package quantity: 3k pcs per package

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