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IRFR3710ZTRPBF

Part No IRFR3710ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 2930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017680-IRFR3710ZTRPBF
Family Name IRFR3710
Introduction Date July 31, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3710ZTRPBF CAD Model

Description

The Infineon Technologies IRFR3710ZTRPBF is an N-channel MOSFET that features a drain-source breakdown voltage of 100V and a continuous drain current of 42A at 25°C.

  • Package: D-Pak
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 18 mOhm @ 33A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Input Capacitance: 2930pF @ 25V
  • Supply and Demand Status: balanced
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7428 $51.9960
165+ $0.6095 $100.5675
255+ $0.5904 $150.5520
355+ $0.5714 $202.8470
455+ $0.5523 $251.2965
610+ $0.4952 $302.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,348 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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