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Same model may have multiple batches, images only for reference.
IRFR3806PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3806PBF

Part No IRFR3806PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 43A DPAK
Datasheet
IRFR3806PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1150pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 15.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069559-IRFR3806PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR3806PBF CAD Model

Description

The Infineon Technologies IRFR3806PBF is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 60V and a Continuous Drain Current of 43A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 15.8 mOhm @ 25A, 10V
  • Power Dissipation: 71W (Tc)
  • Package: D-Pak
  • Technology: SMD (SMT)
  • Use: power management
  • Status: not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4277 $51.3240
250+ $0.4007 $100.1750
390+ $0.3871 $150.9690
560+ $0.3600 $201.6000
725+ $0.3465 $251.2125
905+ $0.3330 $301.3650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,300 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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