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IRFR5410PBF Real Image IRFR5410PBF real image370
Same model may have multiple batches, images only for reference.
IRFR5410PBF Real Image IRFR5410PBF real image370
IRFR5410PBF Real Image IRFR5410PBF real image370
Same model may have multiple batches, images only for reference.

IRFR5410PBF

Part No IRFR5410PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 13A DPAK
Datasheet
IRFR5410PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 66W (Tc)
Maximum Rds On at Id,Vgs 205 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 141454-IRFR5410PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR5410PBF CAD Model

Description

The IRFR5410PBF is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 13A @ 25°C
  • Maximum Rds On: 205mOhm @ 7.8A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 58nC @ 10V
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: D-Pak

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3302 $51.1810
325+ $0.3093 $100.5225
505+ $0.2989 $150.9445
720+ $0.2780 $200.1600
935+ $0.2675 $250.1125
1,170+ $0.2571 $300.8070
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Availability: 40,260 pieces
MOQ: 155 pcs
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