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Same model may have multiple batches, images only for reference.
IRFR5505CPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR5505CPBF

Part No IRFR5505CPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK
Datasheet
IRFR5505CPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047082-IRFR5505CPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5505CPBF CAD Model

Description

The Infineon Technologies 1047082-IRFR5505CPBF is a P-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 18A at 25°C.

  • Maximum Power Dissipation: 57W (Tc)
  • Maximum Rds On: 110 mOhm @ Id,Vgs of 9.6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Package: D-Pak (TO-252-3) with dimensions of SC-63
  • Suitable Applications: Automotive and power management applications

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