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Same model may have multiple batches, images only for reference.
IRFR5505TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR5505TRLPBF

Part No IRFR5505TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK
Datasheet
IRFR5505TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069568-IRFR5505TRLPBF
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5505TRLPBF CAD Model

Description

The Infineon Technologies 069568-IRFR5505TRLPBF is a P-channel MOSFET with a drain-source breakdown voltage of 55V.

  • Power Dissipation: 57W (Tc)
  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Common Applications: Automotive and Power Management
  • Product Status: Active
  • Popularity: Medium

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950+ $0.2113 $200.7350
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1,540+ $0.1954 $300.9160
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