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Same model may have multiple batches, images only for reference.
HAT2096H-EL-E Real Image
Same model may have multiple batches, images only for reference.

HAT2096H-EL-E

Part No HAT2096H-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A LFPAK
Datasheet
HAT2096H-EL-E Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067789-HAT2096H-EL-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HAT2096H-EL-E CAD Model

Description

The Renesas Electronics America HAT2096H-EL-E is a MOSFET integrated circuit (IC) that comes in an LFPAK package.

  • Power Dissipation (Max): 20W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A (Ta) @ 25°C
  • Rds on (Max): 5.3 mOhm @ 20A, 10V
  • Supply and Demand: Sufficient
  • Temperature Range: 150°C (TJ)
  • Dimension: SC-100, SOT-669
  • Gate Charge (Max): 40nC @ 10V
  • Input Capacitance (Max): 2200pF @ 10V
  • Gate-Source Voltage (Max): ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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Availability: 57,000 pieces
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