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IRFR9N20DTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFR9N20DTRPBF

Part No IRFR9N20DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.4A DPAK
Datasheet
IRFR9N20DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017705-IRFR9N20DTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9N20DTRPBF CAD Model

Description

The Infineon Technologies 017705-IRFR9N20DTRPBF is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9.4A
  • Power Dissipation: 86W (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 560pF @ 25V
  • Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V
  • Package: D-Pak
  • Application: Through-hole

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23+ $5.7493 $132.2339
35+ $5.5698 $194.9430
48+ $5.3901 $258.7248
63+ $5.2104 $328.2552
84+ $4.6714 $392.3976
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