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IRFS3206TRRPBF

Part No IRFS3206TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK / Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 089926-IRFS3206TRRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFS3206
Introduction Date June 05, 2006
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFS3206TRRPBF CAD Model

Description

The Infineon Technologies IRFS3206TRRPBF MOSFET is a N-channel power transistor from Infineon Technologies, ideal for use in power management applications.

  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V
  • Package: D2PAK package
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging: reel-tr

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,100 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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