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Same model may have multiple batches, images only for reference.
IRFS3207TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3207TRLPBF

Part No IRFS3207TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 170A D2PAK
Datasheet
IRFS3207TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 7600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083669-IRFS3207TRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3207TRLPBF CAD Model

Description

The Infineon Technologies IRFS3207TRLPBF is a high-performance N-Channel MOSFET.

  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 170A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 260nC @ 10V
  • Maximum Input Capacitance: 7600pF @ 50V
  • Package: D2PAK
  • Mounting: SMD (SMT) technology

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