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Same model may have multiple batches, images only for reference.
IRFS3207ZTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3207ZTRRPBF

Part No IRFS3207ZTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A D2PAK
Datasheet
IRFS3207ZTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6920pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 140245-IRFS3207ZTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3207ZTRRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 300W and a drain-source breakdown voltage of 75V.

  • Power Dissipation: 300W
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 120A @ 25°C
  • Maximum Rds On: 4.1 mOhm @ 75A and 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 6920pF @ 50V
  • Package: D2PAK (TO-263) package

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