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Same model may have multiple batches, images only for reference.
IRFS3307 Real Image
Same model may have multiple batches, images only for reference.

IRFS3307

Part No IRFS3307
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET  Power MOSFET | MOSFET N-CH 75V 130A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 130A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5150pF at 50V
Power Dissipation (Maximum) 250W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187999-IRFS3307
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFS3307 CAD Model

Description

The Infineon Technologies MOSFET is an N-channel transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 130A.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 130A
  • Maximum Gate Source Voltage: ±20V
  • Gate Charge: 180nC @ 10V
  • Maximum Power Dissipation: 250W

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155+ $2.2419 $347.4945
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