The Infineon Technologies IRFS4227PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 200V and a continuous drain current of 62A @ 25°C.

• Maximum Power Dissipation: 330W @ Tc
• Package: D2PAK case
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 98nC @ 10V
• Maximum Input Capacitance: 4600pF @ 25V
• Maximum Rds On @ Id,Vgs: 26 mOhm @ 46A, 10V
• Category: Discrete Semiconductor Products
• Mounting: Suitable for SMD (SMT) mounting.
• Status: not for new designs and has been replaced by alternative parts such as IXTA86N20T, FDB2614, and STB80N20M5.