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IRFS4228TRLPBF

Part No IRFS4228TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 83A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 4530pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 33A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047140-IRFS4228TRLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRFS4228TRLPBF CAD Model

Description

The Infineon Technologies MOSFET is a power transistor.

  • Maximum Power Dissipation: 330W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Mounting Technology: SMD (SMT)
  • Polarity: N-Channel
  • Suitable for: Imaging, video & vision, signal processing, sensing & instrumentation, and portable devices
  • Maximum Rds On: 15 mOhm @ 33A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Packaging: Reel-TR
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -40°C to 175°C (TJ)
  • Package: D2PAK
  • Maximum Input Capacitance: 4530pF @ 25V
  • Maximum Gate Charge: 107nC @ 10V
  • Quantity per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9559 $59.3385
36+ $3.2456 $116.8416
56+ $3.1439 $176.0584
76+ $3.0434 $231.2984
99+ $2.9418 $291.2382
132+ $2.6369 $348.0708
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,990 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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