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IRFS52N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS52N15DPBF

Part No IRFS52N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 51A D2PAK
Datasheet
IRFS52N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069593-IRFS52N15DPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS52N15DPBF CAD Model

Description

The Infineon Technologies IRFS52N15DPBF is an N-Channel MOSFET designed for use in high power applications.

  • Maximum Drain-Source Voltage: 150V
  • Continuous Drain Current: 51A @ 25°C
  • Package: D2PAK
  • Gate Charge: 89nC @ 10V
  • Maximum Rds On: 32 mOhm @ 36A, 10V
  • New Designs: No
  • Popularity: Medium

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56+ $2.0060 $112.3360
87+ $1.9433 $169.0671
120+ $1.8806 $225.6720
155+ $1.8180 $281.7900
207+ $1.6298 $337.3686
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MOQ: 23 pcs
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