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IRFS5615TRLPBF

Part No IRFS5615TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 33A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 117378-IRFS5615TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS5615TRLPBF CAD Model

Description

The Infineon Technologies IRFS5615TRLPBF is a N-Channel MOSFET transistor that is designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Power Dissipation: 144W (Tc)
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Technology: SMD (SMT)
  • Packaging: Reel - TR
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1750pF @ 50V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4163 $63.7335
100+ $1.1622 $116.2200
155+ $1.1258 $174.4990
215+ $1.0896 $234.2640
275+ $1.0531 $289.6025
370+ $0.9443 $349.3910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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