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IRFS7434PBF

Part No IRFS7434PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A D2PAK
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 250μA
Max Gate Charge 324nC @ 10V
Max Input Capacitance 10820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 294W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047160-IRFS7434PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS7434PBF CAD Model

Description

The Infineon Technologies IRFS7434PBF is an N-Channel MOSFET transistor that operates at a maximum power dissipation of 294W (Tc). Its drain-source breakdown voltage is 40V, and it has a continuous drain current @ 25°C of 195A (Tc).

  • Gate-Source Threshold Voltage: 3.9V @ 250μA
  • Maximum Gate Charge: 324nC @ 10V
  • Maximum Input Capacitance: 10820pF @ 25V
  • Maximum Rds On @ Id,Vgs: 1.6 mOhm @ 100A, 10V
  • Package: D2PAK, TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Applications: Power supplies, motor control, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5434 $50.8680
48+ $2.0869 $100.1712
75+ $2.0217 $151.6275
103+ $1.9565 $201.5195
133+ $1.8913 $251.5429
177+ $1.6956 $300.1212
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Availability: 7,320 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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