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IRFS7734-7PPBF

Part No IRFS7734-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 197A D2PAK  /  N-Channel 75 V 197A (Tc) 294W (Tc) Surface Mount D²PAK (TO-263AB)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10130 pF @ 25 V
Power Dissipation (Max) 294W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263AB)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001567770
Standard Package 3,000
Win Source Part Number 1065589-IRFS7734-7PPBF
Ultra Librarian 3D Model Ultra Librarian IRFS7734-7PPBF CAD Model

Description

The Infineon Technologies IRFS7734-7PPBF is a HEXFET® StrongIRFET™ N-channel MOSFET, designed for use in discrete semiconductor products.

  • Drain-Source Voltage: 75V
  • Continuous Drain Current: 197A (Tc)
  • Rds On (Max): 3.05mOhm @ 100A, 10V
  • Package Type: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
  • Mounting Type: through hole
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • REACH: unaffected
  • ECCN: EAR99

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