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Same model may have multiple batches, images only for reference.
IRFSL4228PBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL4228PBF

Part No IRFSL4228PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 83A TO-262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 4530pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 33A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040757-IRFSL4228PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFSL4228PBF CAD Model

Description

The Infineon Technologies IRFSL4228PBF is a high-performance N-channel MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 83A @ 25°C
  • Rds On: 15 mOhm @ 33A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Package: TO-262
  • RoHS Compliant: Yes
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
5+ $11.9184 $59.5920
12+ $9.7794 $117.3528
19+ $9.4733 $179.9927
26+ $9.1684 $238.3784
33+ $8.8623 $292.4559
44+ $7.9452 $349.5888
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Availability: 13,800 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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