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IRFU15N20DPBF

Part No IRFU15N20DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 17A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 17A I-PAK
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047201-IRFU15N20DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFU15N20
Introduction Date June 07, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFU15N20DPBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1047201-IRFU15N20DPBF is an N-channel power MOSFET that features a drain-source breakdown voltage of 200V and a continuous drain current of 17A (Tc).

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 17A (Tc)
  • Package: IPAK (TO-251)
  • Maximum Rds On: 165 mOhm @ 10A, 10V
  • Maximum Gate Charge: 41nC @ 10V
  • Lifecycle Status: obsolete (EOL)
  • Popularity Rating: high

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