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IRFU3303

Name: IRFU3303
Brand: Infineon Technologies
SKU: 455441
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFU3303
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 33A I-PAK
Datasheet	IRFU3303 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	29nC @ 10V
Max Input Capacitance	750pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	57W (Tc)
Maximum Rds On at Id,Vgs	31 mOhm @ 18A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	IPAK (TO-251)
Dimension	TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number	1040382-IRFU3303
Popularity	Medium
Supply and Demand Status	Balance
Quantity per package	75
Ultra Librarian 3D Model	Ultra Librarian IRFU3303 CAD Model

Alternative Products

Description

The Infineon Technologies IRFU3303 is a N-Channel MOSFET that is designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 33A (Tc) @ 25°C
Maximum Rds On: 31 mOhm @ 18A, 10V
Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Maximum Gate-Source Voltage: ±20V
Maximum Gate Charge: 29nC @ 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Input Capacitance: 750pF @ 25V
Product Status: Obsolete (EOL)
Popularity: Medium
Supply and Demand Status: Balanced
Quantity per Package: 75

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