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Same model may have multiple batches, images only for reference.
IRFU3504Z Real Image
Same model may have multiple batches, images only for reference.

IRFU3504Z

Part No IRFU3504Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A I-PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 123436-IRFU3504Z
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU3504Z CAD Model

Description

The Infineon Technologies MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 42A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 42A @ 25°C
  • Maximum Rds On: 9 mOhm @ 42A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: IPAK (TO-251)
  • Mounting: Through-hole
  • Power Dissipation: 90W (Tc)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.3264 $66.6320
11+ $10.9344 $120.2784
17+ $10.5925 $180.0725
23+ $10.2506 $235.7638
30+ $9.9099 $297.2970
40+ $8.8843 $355.3720
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Availability: 8,200 pieces
MOQ: 5 pcs
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