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Same model may have multiple batches, images only for reference.
IRFU3706 Real Image
Same model may have multiple batches, images only for reference.

IRFU3706

Part No IRFU3706
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 75A I-PAK
Datasheet
IRFU3706 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047212-IRFU3706
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Industrial, Power Management, Consumer Electronics, Portable Devices
Ultra Librarian 3D Model Ultra Librarian IRFU3706 CAD Model

Description

The Infineon Technologies IRFU3706 is an N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 75A (Tc).

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 75A (Tc)
  • Mounting: Through Hole
  • Package: IPAK (TO-251)
  • Market Status: Open Market
  • Supply and Demand: Balanced
  • Operating Temperature: -55°C to 175°C (TJ)

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