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Same model may have multiple batches, images only for reference.
IRFU3709 Real Image
Same model may have multiple batches, images only for reference.

IRFU3709

Part No IRFU3709
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A I-PAK
Datasheet
IRFU3709 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 41nC @ 4.5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040385-IRFU3709
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3709 CAD Model

Description

The IRFU3709 is an N-channel MOSFET from Infineon Technologies.

  • Mounting Type: Through-Hole
  • Package: IPAK (TO-251) measuring TO-251-3 Short Leads, IPak, TO-251AA
  • Maximum Power Dissipation: 120W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 90A (Tc) @ 25°C
  • Maximum Rds On: 9 mOhm @ 15A, 10V
  • Category: Discrete Semiconductor Product
  • Popularity: Medium
  • Product Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C and 150°C (TJ)

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54+ $3.2229 $174.0366
75+ $3.1190 $233.9250
96+ $3.0150 $289.4400
129+ $2.7032 $348.7128
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