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Same model may have multiple batches, images only for reference.
IRFU3911PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU3911PBF

Part No IRFU3911PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A I-PAK
Datasheet
IRFU3911PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040386-IRFU3911PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IRFU3911PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 32nC @ 10V
  • Max Input Capacitance: 740pF @ 25V
  • Maximum Rds On: 115 mOhm @ 8.4A, 10V
  • Package: IPAK (TO-251)
  • Mounting: Through-Hole
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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