The Infineon Technologies IRFZ34NS is an N-channel MOSFET transistor.

• Gate-Source Voltage (th) (maximum) @ Id: 4V @ 250μA
• Gate Charge (Qg) (maximum) @ Vgs: 34nC @ 10V
• Gate-Source Voltage (maximum): ±20V
• Input Capacitance (Ciss) (maximum) @ Vds: 700pF @ 25V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Power Dissipation (maximum): 3.8W, 68W
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Popularity: Medium
• Application: Power Management
• Manufacturer Pack Quantity: 50
• MSL Level: 1 (Unlimited)
• Vds - Drain-Source Breakdown Voltage: 55V
• Id - Continuous Drain Current: 29A
• Rds On (Maximum) @ Id, Vgs: 40mOhm @ 16A, 10V