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Same model may have multiple batches, images only for reference.
IRFZ44ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44ZPBF

Part No IRFZ44ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A TO-220AB
Datasheet
IRFZ44ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047256-IRFZ44ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ44ZPBF CAD Model

Description

The Infineon Technologies IRFZ44ZPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 51A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 51A @ 25°C
  • Power Dissipation (Max): 80W
  • Maximum Rds On @ Id,Vgs: 13.9 mOhm @ 31A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 1420pF @ 25V
  • Category: Discrete Semiconductor Products
  • Mounting Type: Through Hole
  • Case/Package: TO-220AB

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