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Same model may have multiple batches, images only for reference.
IRFZ46ZLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ46ZLPBF

Part No IRFZ46ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A TO-262
Datasheet
IRFZ46ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 13.6 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047262-IRFZ46ZLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ46ZLPBF CAD Model

Description

The Infineon Technologies IRFZ46ZLPBF is a N-channel MOSFET transistor that operates on a drain-source breakdown voltage of 55V.

  • Power Dissipation: 82W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 13.6 mOhm @ 31A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 46nC @ 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supply and Demand Status: balanced

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150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
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