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Same model may have multiple batches, images only for reference.
IRFZ48VPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ48VPBF

Part No IRFZ48VPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 72A TO-220AB
Datasheet
IRFZ48VPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 1985pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017737-IRFZ48VPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ48VPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 72A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 12 mOhm @ 43A, 10V
  • Package: TO-220AB
  • Dimension: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 620 pieces
MOQ: 18 pcs
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