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DMN2011UFX-7

Part No DMN2011UFX-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 12.2A DFN2050-4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12.2A (Ta)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 10A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 2248pF @ 10V
Maximum Power Dissipation 2.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package V-DFN2050-4
Win Source Part Number 119373-DMN2011UFX-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2011UFX-7 CAD Model

Description

Product Overview: DMN2011UFX-7 - Diodes Incorporated

The DMN2011UFX-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated, designed for power management applications. This MOSFET is part of Diodes Incorporated's extensive range of semiconductor products and is engineered to provide efficient power control and conversion in a compact package.

Key Features

  • Low On-Resistance: The device features a low on-resistance (RDS(on)) which ensures minimal power loss during operation, enhancing overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) that allows it to handle significant power without performance degradation.
  • PowerDI5060-8 Package: The DMN2011UFX-7 is housed in a PowerDI5060-8 package, which offers an excellent thermal performance and is suitable for compact circuit designs.
  • RoHS Compliant: Complying with RoHS standards, this product is manufactured with the environment in mind, minimizing the use of hazardous substances.

Applications

The versatility of the DMN2011UFX-7 allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Computing Devices

Electrical Characteristics

Operating within a voltage range of 20V, the DMN2011UFX-7 provides a gate threshold voltage (VGS(th)) that ensures reliable switching performance. Its fast switching speed is coupled with a low gate charge (Qg), which reduces the energy required to turn the transistor on and off, thereby conserving power.

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products, and the DMN2011UFX-7 is no exception. It has undergone rigorous testing to ensure it meets the stringent requirements for reliability and performance in industrial and consumer electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4350 $50.0250
250+ $0.4075 $101.8750
385+ $0.3937 $151.5745
550+ $0.3662 $201.4100
710+ $0.3524 $250.2040
890+ $0.3386 $301.3540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,950 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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