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Same model may have multiple batches, images only for reference.
IRG4PC50KPBF Real Image
Same model may have multiple batches, images only for reference.

IRG4PC50KPBF

Part No IRG4PC50KPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description SHORT CIRCUIT RATED ULTRAFAST IG
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 52 A
Current - Collector Pulsed (Icm) 104 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Power - Max 200 W
Switching Energy 490µJ (on), 680µJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C 38ns/160ns
Test Condition 480V, 30A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Standard Package 133 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875204-IRG4PC50KPBF
Ultra Librarian 3D Model Ultra Librarian IRG4PC50KPBF CAD Model

Description

The IRG4PC50KPBF is a single IGBT transistor from Infineon Technologies.

  • Series: IRG4PC50KPBF
  • Category: Discrete Semiconductor Products
  • Power Rating: 200W
  • Collector-Emitter Breakdown Voltage (Vce): 600V
  • Maximum Collector Current (Ic): 52A
  • Maximum Collector Current Pulsed (Icm): 104A
  • On-State Voltage (Vce(on)): 2.2V @ 15V and 30A
  • Switching Energy (On): 490μJ
  • Switching Energy (Off): 680μJ
  • Package: TO-247-3
  • Packaging: Bulk with 133 pieces
  • Operating Temperature: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • REACH: Unaffected

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57+ $6.1088 $348.2016
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Availability: 2,800 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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