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Same model may have multiple batches, images only for reference.
IRG4PH40UD2-EP Real Image
Same model may have multiple batches, images only for reference.

IRG4PH40UD2-EP

Part No IRG4PH40UD2-EP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 41A 160W TO247AD
Datasheet
IRG4PH40UD2-EP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 41A
Pulsed Collector Current 82A
Collector-emitter saturation voltage(Max) 3.1V @ 15V, 21A
Maximum Power Dissipation 160W
Total Switching Energy(Ets) 1.95mJ (on), 1.71mJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 22ns/100ns
Testing Conditions 800V, 21A, 10 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 069652-IRG4PH40UD2-EP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PH40UD2-EP CAD Model

Description

The IRG4PH40UD2-EP is an IGBT type device manufactured by Infineon Technologies.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 41A
  • Package: TO-247AD
  • Reverse Recovery Time: 50ns
  • Maximum Power Dissipation: 160W
  • Pulsed Collector Current: 82A
  • Collector-Emitter Saturation Voltage (Max): 3.1V @ 15V, 21A
  • Total Switching Energy (Ets): 1.95mJ (on), 1.71mJ (off)
  • Turn-On and Turn-Off Delay Time: 22ns/100ns
  • Usage: Commonly Used

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