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IRG4PH50KDPBF

Part No IRG4PH50KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 45A 200W TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 45A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 3.5V @ 15V, 24A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 3.83mJ (on), 1.9mJ (off)
Input Type Standard
Gate Charge 180nC
Turn-on and Turn-off delay time 87ns/140ns
Testing Conditions 800V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 016638-IRG4PH50KDPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4PH50KDPBF CAD Model

Description

The Infineon Technologies IRG4PH50KDPBF is a TO-247AC packaged IGBT transistor with a VCEO maximum collector-emitter breakdown voltage of 1200V and a maximum current collector of 45A.

  • Maximum Power Dissipation: 200W
  • Gate Charge: 180nC
  • Reverse Recovery Time (trr): 90ns
  • Input Type: Standard
  • Operating Temperature: -55°C to 150°C (TJ)
  • Collector-Emitter Saturation Voltage (Max): 3.5V @ 15V, 24A
  • Total Switching Energy (Ets): 3.83mJ (on), 1.9mJ (off)
  • Turn-On and Turn-Off Delay Time: 87ns/140ns
  • Supply and Demand Status: Limited

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