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Same model may have multiple batches, images only for reference.
IRGB4610DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGB4610DPBF

Part No IRGB4610DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT WITH RECOVERY DIODE / IGBT 600 V 16 A 77 W Through Hole TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 18 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Power - Max 77 W
Switching Energy 56µJ (on), 122µJ (off)
Input Type Standard
Gate Charge 13 nC
Td (on/off) @ 25°C 27ns/75ns
Test Condition 400V, 6A, 47Ohm, 15V
Reverse Recovery Time (trr) 74 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Standard Package 50 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921516-IRGB4610DPBF
Ultra Librarian 3D Model Ultra Librarian IRGB4610DPBF CAD Model

Description

The Infineon Technologies IRGB4610DPBF is a single IGBT transistor from Infineon Technologies.

  • Type: Single IGBT Transistor
  • Power Rating: 77 W
  • Collector-Emitter Breakdown Voltage: 600 V
  • Current Rating: 16 A
  • Pulsed Current Rating: 18 A
  • On-State Voltage Drop: 2V @ 15V and 6A
  • Reverse Recovery Time: 74 ns
  • Gate Charge: 13 nC
  • Switching Energy (on): 56µJ
  • Switching Energy (off): 122µJ
  • Input Type: Standard
  • Operating Temperature Range: -40°C to 175°C
  • Mounting: Through hole
  • Package: TO-220-3
  • Status: Obsolete

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