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Same model may have multiple batches, images only for reference.
IRGIB15B60KD1P Real Image
Same model may have multiple batches, images only for reference.

IRGIB15B60KD1P

Part No IRGIB15B60KD1P
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 19A 52W TO220FP
Datasheet
IRGIB15B60KD1P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 19A
Pulsed Collector Current 38A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 15A
Maximum Power Dissipation 52W
Total Switching Energy(Ets) 127μJ (on), 334μJ (off)
Input Type Standard
Gate Charge 56nC
Turn-on and Turn-off delay time 30ns/173ns
Testing Conditions 400V, 15A, 22 Ohm, 15V
Reverse Recovery Time (trr) 67ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Win Source Part Number 069669-IRGIB15B60KD1P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGIB15B60KD1P CAD Model

Description

The Infineon Technologies 069669-IRGIB15B60KD1P is a through-hole mounted IGBT (Insulated Gate Bipolar Transistor) type electronic component. It has a maximum collector-emitter breakdown voltage of 600V and a maximum power dissipation of 52W.

  • IGBT Type: NPT (Non-Punch Through)
  • Gate Charge: 56nC
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 15A
  • Total Switching Energy (on): 127μJ
  • Total Switching Energy (off): 334μJ
  • Turn-on Delay Time: 30ns
  • Turn-off Delay Time: 173ns
  • Supply and Demand Status: limited.

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