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Same model may have multiple batches, images only for reference.
IRGP4069D-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4069D-EPBF

Part No IRGP4069D-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IRGP4069 - DISCRETE IGBT WITH AN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 76 A
Current - Collector Pulsed (Icm) 105 A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 35A
Power - Max 268 W
Switching Energy 390µJ (on), 632µJ (off)
Input Type Standard
Gate Charge 104 nC
Td (on/off) @ 25°C 46ns/105ns
Test Condition 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) 120 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 921522-IRGP4069D-EPBF
Ultra Librarian 3D Model Ultra Librarian IRGP4069D-EPBF CAD Model

Description

The Infineon Technologies IRGP4069D-EPBF is a single IGBT transistor designed for discrete semiconductor applications.

  • Type: Trench IGBT
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power: 268W
  • Reverse Recovery Time: 120ns
  • Maximum Collector Current: 76A
  • Maximum Pulsed Collector Current: 105A
  • On-State Voltage: 1.85V @ 15V and 35A
  • Switching Energy (on): 390µJ
  • Switching Energy (off): 632µJ
  • Mounting: Through-hole
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 175°C

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Quantity Unit Price Ext. Price
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14+ $8.7835 $122.9690
21+ $8.5091 $178.6911
29+ $8.2346 $238.8034
37+ $7.9602 $294.5274
49+ $7.1367 $349.6983
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Availability: 64 pieces
MOQ: 6 pcs
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