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Same model may have multiple batches, images only for reference.
FQU2N60C Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU2N60C

Part No FQU2N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.9A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 235pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 4.7 Ohm @ 950mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 204322-FQU2N60C
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQU2N60C CAD Model

Description

Fairchild/ON Semiconductor's FQU2N60C is an N-channel MOSFET designed for high performance switching applications.

  • Supply and Demand: Limited
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.9A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,040 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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