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Same model may have multiple batches, images only for reference.
IRGP4640PBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4640PBF

Part No IRGP4640PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 65 A
Current - Collector Pulsed (Icm) 72 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A
Power - Max 250 W
Switching Energy 100µJ (on), 600µJ (off)
Input Type Standard
Gate Charge 75 nC
Td (on/off) @ 25°C 40ns/105ns
Test Condition 400V, 24A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
Standard Package 145 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 875218-IRGP4640PBF
Ultra Librarian 3D Model Ultra Librarian IRGP4640PBF CAD Model

Description

The IRGP4640PBF is a single IGBT (Insulated Gate Bipolar Transistor) designed for use in discrete semiconductor products.

  • Power: 250W
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 65A
  • Pulsed Current Rating: 72A
  • Vce(on): 1.9V @ 15V and 24A
  • Switching Energy (on): 100μJ
  • Switching Energy (off): 600μJ
  • Gate Charge: 75nC
  • Turn-on/off delay time @ 25°C: 40ns/105ns
  • Mounting: Through-hole
  • Package: TO-247-3
  • Operating Temperature: -40°C to 175°C
  • Manufacturer: Infineon Technologies
  • Production Status: Active

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Quantity Unit Price Ext. Price
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42+ $2.3835 $100.1070
65+ $2.3090 $150.0850
90+ $2.2346 $201.1140
116+ $2.1601 $250.5716
155+ $1.9366 $300.1730
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